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When a germanium p — n junction biased in the forward direction has a reverse voltage suddenly applied, a large transient current flows during the ``recovery time.'' A proposed mechanism for this current involving diffusion of stored minority carriers to the barrier is compared with experimental results. Since the current is related to the diode forward direction characteristics these are examined. Finally a variable time delay utilizing the recovery current effect is discussed.
Shulman et al. (1953) studied this question.