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Using self-consistent pseudopotential calculations the ideal (110) surfaces of III-V and II-VI zinc-blende semiconductors are investigated; GaAs and ZnSe are considered as prototypes. The total valence charge densities and individual surface states are discussed and displayed for both GaAs and ZnSe. A local density of states is also calculated for both types of surfaces. In the case of GaAs, the theoretically calculated dangling-bond states are analyzed using recent experimental results.
Chelikowsky et al. (Thu,) studied this question.
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