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We consider a one-band model effective Hamiltonian H₄₅₅ deriv ed previously from the three-band model H for CuO₂ planes. The parameters of H₄₅₅ are given in terms of those of H by a simple prescription. Using H₄₅₅ and the slave-boson approach of Kotliar and Ruckenstein, we determine the metal-insulator boundary and the magnitude of the charge-transfer gap as a function of the parameters of H. Our results are in better agreement with experiment than those obtained applying the slave bosons directly to H. For sufficiently large values of the Cu-O repulsion U₃, treated in the Hartree-Fock approximation, there is a charge-transfer instability inside the metallic phase, very near the metal-insulator boundary.
Simón et al. (Wed,) studied this question.