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The structure of an as‐grown and heat‐treated porous silicon layer (PSL) and silicon epitaxial growth on PSL are investigated. Many micropores are formed inside of PSL and zig‐zag in the thickness direction. The crystalline structure of PSL is single crystal, but there is a polycrystal silicon on the surface and lattice strain exists. The structure of PSL is changed by high temperature heat‐treatment. At 1000°C, PSL is a mosaic crystal. Above 1070°C, PSL is a single crystal. After heat‐treatment, PSL remains porous and both the pore distribution and the pore size are changed. The surface roughness and the pore size become large with rising heat‐treatment temperature. From the experimental results of silicon epitaxial growth on PSL it is found that good epitaxial layers grow on PSL.
Unagami et al. (Tue,) studied this question.