Resonance Raman scattering in Si at elevated temperatures

We have studied the resonance behavior of the Raman susceptibility for the 520-cm^-1, ₂₅^', phonon of Si from 1. 8 to 3. 7 eV with sample temperatures from 300 to 915 K. Both Stokes and anti-Stokes data have been obtained with thirteen cw argon- and krypton-laser lines and extracavity frequency doubling of the 752. 5-nm Kr line. All data were corrected for absorption, solid-angle, and reflectivity effects using recent ellipsometric data of Jellison and Modine over a similar temperature range. The data show clearly the temperature-dependent broadening and shift (dEdT=-3. 710^-4 eV/K) of the E₀^'E₁ resonance. The modulus of the frequency derivative of the complex dielectric constant provides a good approximation to the Raman susceptibility when shifted higher by about one-half the phonon frequency. Resonance effects on Stokes and anti-Stokes ratios are examined carefully and related to recent Raman measurements of temperature during pulsed-laser annealing.