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We report the first observation of stimulated emission (16 K and 77 K) in any material grown by atomic layer epitaxy (ALE). The quantum wells in this structure are six uncoupled InAs layers 6.6 Å thick separated by 509 Å thick GaAs barriers. These are the thinnest and most highly strained (7.4%) quantum wells ever reported to support stimulated emission. These results demonstrate that ALE is capable of growing laser quality material with good control of the growth process.
Tischler et al. (Mon,) studied this question.