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p-type ZnSe layers have been grown by molecular beam epitaxy using nitrogen radical doping. We have employed Pt as the electrode material for p-type ZnSe. The Pt electrodes markedly reduced contact resistances. The p-type conduction was confirmed by Hall measurement. Carrier concentration was 4.4×10 15 cm -3 . Hall mobility was as high as 86 cm 2 /V·s because of good crystallinity. The p-type ZnSe layers exhibited the 2.616-eV emission from recombination between free electrons and acceptor holes (FA) in room-temperature photoluminescence measurement. The FA emission provides evidence that the layers are p-type ZnSe.
Ohkawa et al. (Fri,) studied this question.
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