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We present calculations of the temperature profiles induced by a moving cw elliptical laser beam with a Gaussian intensity distribution in a semi-infinite material. Temperature-dependent thermal diffusivity, conductivity, and surface reflectivity are incorporated in our model, and some aspects of melting are discussed. As an example, we apply the calculations to silicon. For a comparison of stationary elliptical spots of varying eccentricities, we present material-independent normalized linear temperature profiles. We find that highly elliptical beams can be used to rapidly scan and anneal large areas.
Moody et al. (1982) studied this question.