Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak-to-valley current ratios of 30 at room temperature

Pseudomorphic In0.53 Ga0.47 As/AlAs/InAs resonant tunneling diodes have been grown on InP substrates by molecular beam epitaxy. Peak-to-valley current ratios as high as 30 at 300 K and 63 at 77 K are obtained on a structure with barriers of ten atomic layers AlAs, and a well consisting of three atomic layers of In0.53 Ga0.47 As, six atomic layers of InAs, and three atomic layers of In0.53 Ga0.47 As. For comparison pseudomorphic In0.53 Ga0.47 As/AlAs with In0.53 Ga0.47 As well structures have also been fabricated. For the In0.53 Ga0.47 As well structures, peak-to-valley current ratios as high as 23 have been obtained at 300 K, and, in other devices with lower current densities, two resonances are observed at room temperature.