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Growth of Ge islands on Si(001) is observed in real time with high spatial resolution, using UHV transmission electron microscopy. We are able to monitor the formation of successive strain-relieving dislocations. The shape of the island oscillates as it grows, with each cycle corresponding to the introduction of one dislocation. Such growth cycles are shown to be a general feature of the growth of strain-relaxed islands, occurring even in equilibrium.
LeGoues et al. (1994) studied this question.