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Abstract The ferroelectric memory is the most suitable device for memory embedded applications. Its manufacturing process makes it more compatible with the standard CMOS process than the traditional non-volatile memory processes, due to device operation voltage requirements. In addition, it provides clear advantages such as non-volatility, lower power consumption, higher endurance on writing cycles and higher writing speed. The most significant benefits of the embedded ferroelectric memory are shown on contactless smart IC cards and RF-ID cards without battery backup, which will expand the electronic ID market in a variety of applications. A super high integration chip will not be produced without having any redundancy circuit on it. If the ferroelectric memory technology is applied to FPGA (field programmable gate array), however, this problem will be solved. The ferroelectric memory technology will lead to a new semiconductor device architecture, and will take the major place in the coming multi-media era.
H. Takasu (Wed,) studied this question.