What does this research mean for the field?

A 4Mb Ferroelectric Random Access Memory embedded within a 130nm CMOS platform achieves wear-out free endurance up to 5.4 × 10^13 cycles and a 10-year data retention at 85°C, demonstrating its viability for embedded processing applications. Novelty: ClaimNovelty.INCREMENTAL. Consensus alignment: ConsensusAlignment.NEUTRAL.

January 1, 2010

Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS

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Abstract

We present results of a comprehensive reliability evaluation of a 2T-2C, 4Mb, Ferroelectric Random Access Memory embedded within a standard 130nm, 5LM Cu CMOS platform. Wear-out free endurance to 5.4 × 10 13 cycles and data retention equivalent of 10 years at 85°C is demonstrated. The results show that the technology can be used in a wide range of applications including embedded processing.

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