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A highly efficient, wideband power amplifier designed in GaN technology and utilizing a non-uniform distributed topology is reported in this paper. Measured results of an NGES fabricated NDPA demonstrate very high efficiency across the multi-octave bandwidth. Average CW output power and PAE across 2-15 GHz was 5.5 W and 25%, respectively. Maximum output power reached 6.9 W with 32% PAE at 7 GHz. A follow-on effort utilizing NGST's mmW foundry process was initiated in an attempt to achieve even higher efficiencies while compacting the size of the chip.
Gassmann et al. (Fri,) studied this question.