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We report on the implementation of crystal ion slicing in lithium niobate (LiNbO3). Deep-ion implantation is used to create a buried sacrificial layer in single-crystal c-cut poled wafers of LiNbO3, inducing a large etch selectivity between the sacrificial layer and the rest of the sample. 9-μm-thick films of excellent quality are separated from the bulk and bonded to silicon and gallium arsenide substrates. These single-crystal films have the same room-temperature dielectric and pyroelectric characteristics, and ferroelectric transition temperature as single-crystal bulk. A stronger high-temperature pyroelectric response is found in the films.
Levy et al. (Mon,) studied this question.
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