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Different interfacial structures are found for Yb/GaAs (001) contacts with different Yb thicknesses, namely 3 and 20 A, by grazing-incidence x-ray diffraction with the use of synchrotron radiation. Different Schottky-barrier height values are also found for these samples. It is concluded that the metal-semiconductor contact, accompanied by reaction and diffusion, is homogeneous in the vicinity of the interface and that the Schottky-barrier height is not finally determined at the initial stage of interface formation for this system.
Hirose et al. (1989) studied this question.