Key points are not available for this paper at this time.
The possibility of reliable and reproducible p-type doping of (311)A GaAs by Si during molecular-beam epitaxial growth and the application of such doping in the realization of high-performance electronic devices have been investigated. It is seen that p-type doping upto a free hole concentration of 4×1019 cm−3 can be obtained under conditions of low As4 flux and high (≥660 °C) growth temperatures. n-type doping up to a level of 1×1019 cm−3 is obtained at low (≤500 °C) growth temperature and high As4 flux. The p-type doping is extremely reproducible and the incorporation of Si atoms into electrically active As sites is at least 95%. The doping behavior has been studied and confirmed by Raman spectroscopy. n-p-n heterojunction bipolar transistors grown by all Si doping exhibit excellent current voltage characteristics and a common emitter current gain β=240. Doped channel p-type heterojunction field-effect transistors have transconductance gm=25 mS/mm.
Li et al. (Thu,) studied this question.