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Use of a cracked Sb source and a postgrowth anneal procedure has been found to yield significant improvements in optical efficiencies of GaInSb/InAs superlattices grown by molecular beam epitaxy. Appreciable 5 μm band-to-band luminescence has been observed at room temperature, and stimulated emission at 3.2 μm has been demonstrated in an optically pumped structure. Intrinsic properties of this class of superlattices favor them for application as efficient infrared lasers operating at comparatively high temperatures.
Miles et al. (Mon,) studied this question.