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The structural properties and energy-gap dependence on InBi content and temperature are investigated for metalorganic-vapor-phase-epitaxy (MOVPE)-grown InAsBi. All measurement results-X-ray-diffraction, secondary ion mass spectroscopy (SIMS), and Rutherford-backscattering-spectroscopy (RBS) channeling-show that the layer has good crystalline quality. The energy-gap dependence on InBi content is evaluated by optical-transmission and low-temperature photo luminescence, and it is shown that the dependence can be expressed by a linear equation. The temperature dependence of E g (Δ E g /Δ T ) is evaluated by optical-transmission measurement. The Δ E g /Δ T of 0.22 meV/K obtained for InAs 0.963 Bi 0.037 is smaller than that of InSb (0.29 meV/K), whose energy gap is smaller than that of InAs 0.963 Bi 0.037 .
Okamoto et al. (Mon,) studied this question.
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