Room Temperature cw Operation of Visible InGaAsP Double Heterostructure Laser at 671 nm Grown by Hydride VPE

Room temperature cw laser operation was achieved at a wavelength as short as 671 nm using an InGaAsP/InGaP double heterostructure (DH) laser on GaAs 0.62 P 0.38 substrate for the first time. The DH structure was grown by the hydride vapor phase epitaxial method with a dual-growth-chamber reactor. With a mesa stripe laser structure, the threshold current density J th was as low as 4.5 kA/cm 2 and the characteristic temperature T 0 was 90 K at around room temperature.