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We demonstrate that both a low resistance state and a high resistance state can be written by bipolar voltage application in a local region of NiO/Pt films by using conducting atomic force microscopy. To investigate how oxygen played a role in the resistance switching phenomenon, a local writing process in O18 tracer gas atmosphere was carried out and the composition change was examined by time-of-flight secondary ion mass spectroscopy. As a result, it was revealed that oxygen moves to the anode side, and the composition of the NiO surface might change thereby causing the change in resistance.
Yoshida et al. (Mon,) studied this question.