High-performance amorphous-silicon field-effect transistors

p-channel and n-channel amorphous-silicon field-effect transistors with thermally grown SiO2 as a gate insulator have been investigated. On-off current ratios of 4×106 and 105 were obtained for n- and p-channel modes, respectively, and the electron and hole mobilities were about 0.1 and 2×10−3 cm2/V/s, respectively.