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In organometallic vapor phase epitaxial growth of AlGaN on sapphire, the role of the low-temperature-deposited interlayers on a high-temperature-grown GaN layer was investigated by in-situ stress measurement, X-ray diffraction, and transmission electron microscopy. Crack-free and low-dislocation-density AlGaN with the whole compositional range has been realized on the sapphire substrate.
Amano et al. (1999) studied this question.