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The first solid-state field-effect transistor has been fabricated utilizing a film of an organic macromolecule, polythiophene, as a semiconductor. The device characteristics have been optimized by controlling the doping levels of the polymer. The device is a normally off type and the source (drain) current can be modulated by a factor of 102–103 by varying the gate voltage. The carrier mobility and the transconductance have also been determined to be ∼10−5 cm2/V s and 3 nS, respectively, by means of electrical measurements.
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Tsumura et al. (Mon,) studied this question.
www.synapsesocial.com/papers/69dbedfbd60f0b8828835c2c — DOI: https://doi.org/10.1063/1.97417
Akira Tsumura
Hiroshi Koezuka
Torahiko Ando
Applied Physics Letters
Mitsubishi Electric (Japan)
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