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Metallic LaNiO3 (LNO) films were prepared on LaAlO3 (LAO) by metalorganic decomposition (MOD) and their application as the bottom electrode in sol-gel derived BaTiO3 (BTO) thin film was studied by means of x-ray diffraction, Raman spectroscopy, and scanning electron microscopy. BTO film on LNO-coated LAO exhibited preferred (100) orientation and smooth surface with fine grains (∼50 nm). Electrical measurements on BTO film capacitor showed good ferroelectric hysteresis, lower loss tangent and good insulating properties. These results indicated the BTO/LNO heterostructure fabricated by sol-gel and MOD technique to be a promising combination for microelectronic device applications.
Li et al. (Mon,) studied this question.