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The electron Hall mobility has been measured in semiconducting SrTiO₃ over the temperature range from 1. 6 to 550^. Electron concentrations in the range from 110^17 to 2. 510^19 cm^-3 were obtained by reduction or by doping with niobium. The niobium donor centers remain fully ionized down to the lowest temperatures investigated. The low-temperature mobility in niobium-doped SrTiO₃ is approximately 4 times larger than in reduced SrTiO₃ over the concentration range investigated, and mobility values up to 2. 210^4 cm^2/V sec were measured in niobium-doped samples having electron concentrations of approximately 210^17 cm^-3. The mobility results are compared with the behavior expected for scattering by ionized defects and polar optical lattice modes at low and high temperatures, respectively.
Tufte et al. (Wed,) studied this question.
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