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We have separately probed the doping behavior of semiconducting (S) and metallic (M) single-wall carbon-nanotube (SWNT) films, by optical absorption and dc resistance (R) measurements. Either electron acceptors (Br₂, I₂) or donors (K, Cs) were used as dopants with controlled stoichiometry. Disappearance of absorption bands at 0. 68, 1. 2, and 1. 8 eV, and concomitant decrease of R by doping have been attributed to electron depletion from or filling to specific bands in S- or M-SWNT's, demonstrating their amphoteric doping behavior. Changes in the electronic properties are discussed in terms of the charge-transfer mechanism in the framework of the rigid-band model.
Kazaoui et al. (Mon,) studied this question.
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