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We have used medium-energy ion scattering and scanning tunneling microscopy to determine the geometric structure of the As/Si (111) - (11) surface. It has been proposed on the basis of core-level and valence-band photoemission experiments that this surface has a bulklike truncation with the outer silicon monolayer replaced by arsenic. Ion scattering experiments indicate that both ordered and disordered (11) phases exist at near-monolayer arsenic coverage, with the relative abundance of each phase dependent on deposition conditions. Tunneling images of the surface confirm the existence of bulk terminated (11) regions intermingled with chaotic areas. Finally, examination of the surfaces with angle-resolved ultraviolet photoemission spectroscopy showed little sensitivity to the presence of disorder.
Copel et al. (Wed,) studied this question.