The Epitaxial Growth of GaP by a Gasub 2O Vapor Transport Mechanism

Single crystals of have been grown from the vapor phase in an open tube process on seeds of either or . The reaction between and a source above 700°C in a stream of H2 provides the vapor phase species which react upon cooling to deposit crystals. Epitaxial layers of have been grown on substrates at temperatures as low as about 700°C, but the growth rates are extremely small. Substrate temperatures of about 1000°–1080°C and source temperatures of 1100°C generally were employed in this investigation to obtain reasonable growth rates for the production of large single crystals. Single crystals of and solid solutions of also have been grown by this method. The growth conditions, crystal morphology, crystal properties, doping, and growth from the elements are discussed.