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Light-emitting diodes (LEDs) having a ZnCdSe/ZnSe single quantum well (SQW) were grown by metal organic chemical vapour deposition (MOCVD) at a growth temperature of 480°C. Diisopropylamine (Di-PNH) was used as a p-type dopant. Light emission was observed at a wavelength of 500 nm (2.480 eV) with a full-width at half-maximum (FWHM) of 7.3 nm (36 meV) at 77K.
Toda et al. (Thu,) studied this question.