May 1, 1982

Surface ripples on silicon and gallium arsenide under picosecond laser illumination

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Abstract

We report experimental results on spontaneous periodic surface structures or ripples which occur on the surface of crystalline or ion-implanted semiconductors, using high-power picosecond laser pulses. We suggest that these surface ripples develop as the result of an exponentially growing interaction between the incident laser wave front and a scattered surface optical wave.

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Fauchet et al. (Sat,) studied this question.

www.synapsesocial.com/papers/69ffcb047e61d2a3f0c22eb5 — DOI: https://doi.org/10.1063/1.93274

Authors

P. M. Fauchet

A. E. Siegman

Journals

Applied Physics Letters

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Institutions

Stanford University

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Surface ripples on silicon and gallium arsenide under picosecond laser illumination

Key Points

Abstract

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Discussion

Cite this study

Authors

Journals

Actions

Institutions

References and Citations

Citation Network

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Discussion

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