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Determination of the detailed nature of the semiconductor-to-metal transition in doped semiconductors is obscured by the random placement of the impurities. We report the results of a Monte Carlo percolation calculation which show that the details of the Hall-coefficient data in Si: P and, less clearly, in Ge: Sb are consistent with the existence of a discontinuous transition from insulator to metal at T=0^K as the impurity concentration is increased.
Holcomb et al. (Tue,) studied this question.