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An Internally-matched GaN HEMT Amplifier with 550-watt Peak Power at 3.5 GHz | Synapse

January 1, 2006

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An Internally-matched GaN HEMT Amplifier with 550-watt Peak Power at 3.5 GHz

YWYifeng WuBeijing Institute of Technology SWSimon M. WoodNuffield Orthopaedic Centre RSR.P. SmithMichigan Technological University

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Resumen

A high-power amplifier using two 28.8-mm-periphery GaN HEMTs was demonstrated with all matching components inside the package. When biased at 55 V, a power bandwidth of 3.3-3.6 GHz was obtained, with 550-Wpeak output, 12.5-dB associated gain and 66% drain efficiency at 3.45 GHz

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Cite This Study

Wu et al. (Sun,) studied this question.

synapsesocial.com/papers/6a17d7653aabde875b130063 https://doi.org/https://doi.org/10.1109/iedm.2006.346800

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