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A novel iron oxide (Fe-O) ReRAM is proposed and its high-speed resistance-switching of 10 ns is demonstrated. The switching mechanism is confirmed as a redox reaction between Fe 3 O 4 and y-Fe 2 O 3 . Based on this model, we have achieved long-retention characteristics by introducing Zn atoms to suppress the reduction process.
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S. Muraoka
K. Osano
Yuchi Kanzawa
Panasonic (Japan)
Matsushita Memorial Hospital
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Muraoka et al. (Sat,) studied this question.
www.synapsesocial.com/papers/69daaa2b84371aa676a3db7a — DOI: https://doi.org/10.1109/iedm.2007.4419063