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We report a polarization-resolved infrared absorption study of the quantum-well-width dependence of the electron intersubband transitions in strained InGaAs/AlAs single quantum wells (SQWs) 3, 4, and 5 monolayers (ML) in width. An intersubband transition energy as high as 0.8 eV (i.e., a wavelength as short as 1.55 μm) is observed with transverse magnetic field polarization for a 3-ML-thick InGaAs SQW. This is the highest quantum-well intersubband transition energy ever reported in any materials system.
Smet et al. (1994) studied this question.