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The first all-silicon integrated-optical components for 1.3/1.6 μm have been demonstrated. An optical power divider with end-fire coupling was constructed from intersecting channel waveguides. Guides were fabricated by plasma-etching of an intrinsic Si layer grown epitaxially on a heavily doped Si substrate (n on n+ or p on p+). Active components are proposed.
Soref et al. (Thu,) studied this question.