A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature

We have studied the effect of barrier height on the negative differential resistance characteristics of In 0.53 Ga 0.47 As-based resonant tunneling barriers (RTBs), including In 0.53 Ga 0.47 As/(In 0.52 Al 0.48 As) x (In 0.53 Ga 0.47 As) 1- x RTBs, lattice-matched to an InP substrate, and In 0.53 Ga 0.47 As/AlAs pseudomorphic RTBs also grown on InP substrates. A peak-to-valley current ratio of 14 (300 K) and 35 (77 K) with a high peak-current density of 2.3×10 4 A/cm 2 was achieved for a resonant tunneling barrier structure of In 0.53 Ga 0.47 As (15 atomic layers)/AlAs (9 atomic layers).