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Lattice matched and pseudomorphic In0.53 Ga0.47 As/InxAl1−x As resonant tunneling diodes, with some of the best dc performance ever reported, have been fabricated and their high-frequency power generation capabilities have been theoretically studied. For the lattice matched system a peak-to-valley ratio of 7 (300 K) and 21 (77 K) with a peak current density of approximately 10 kA/cm2 is measured. The pseudomorphic system with a In0.53 Ga0.47 As well and AlAs barriers results in a peak-to-valley ratio of 24 (300 K) and 51 (77 K) with a peak current density of approximately 15 kA/cm2. Based on a quasistatic large signal waveform analysis the power generating capability of the InGaAs device is compared with a GaAs based device with an equally high peak current density and it is found that for very high-frequency power applications the InGaAs based device is better.
Mehdi et al. (Thu,) studied this question.