Bonding of Se and ZnSe to the Si(100) surface

The interfaces formed when films of Se and ZnSe are deposited on Si (100) substrates have been studied with photoemission core-level spectroscopy. For Se films deposited at room temperature and annealed, the presence of Si atoms with chemical shifts of, 2, 3, and 4 where is 0. 530. 03 eV were found, suggesting the formation of SiSe₂. At higher annealing temperatures, the results are consistent with the presence of a submonolayer of Se atoms in bridge sites on the Si (100) surface. ZnSe films were deposited at room temperature and at 300^ on Si (100) and the primary bonding at the interface was found to be between Si and Se. Island formation occurred in the initial stages of growth at the higher temperature.