Recombination in Semiconductors by a Light Hole Auger Transition

Abstract The transition rates for an Auger collision process in semiconductors which involves the light hole band is calculated using a quantum mechanical perturbation method. Spherical energy surfaces are assumed although non parabolic energy bands are allowed for. The temperature dependence of the lifetime of excess carriers due to this process is investigated and the results applied to InSb and InAs in the temperature range 200 to 500°K. The shape of the temperature dependence of this theoretical lifetime for InSb agrees well with experiment at room temperature and above, and when estimates of overlap parameters which occur in the theory are made the absolute magnitude of the lifetime also agrees with experiment. The probability per unit time that a light hole created by a photon of energy h v will take part in an impact ionizing transition is also given as a function of h v . It is concluded that the transition rate for this process is at least comparable to that of the more usual Auger transitions involving the heavy hole and conduction bands only.