Key points are not available for this paper at this time.
Anderson localization of both electrons and holes in the inversion layers of n and p channel MNOSFET's has been investigated. The spatial extent of the localized state wavefunction has been obtained as a function of energy mod E mod from the mobility edge. The results are in agreement with theoretical predictions that a two-dimensional localized state wavefunction varies as exp(- alpha r) where alpha is proportional to mod E mod 0.75.
Pepper et al. (Wed,) studied this question.