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We report a Raman spectroscopy investigation of electrochemically self-assembled quasiperiodic arrays of CdS quantum dots with characteristic feature size of 10 nm. The dots were synthesized using electrochemical deposition of CdS into a porous anodized alumina film. Polarization-dependent Raman scattering study over an extended frequency range reveals the quantization of electronic states in the conduction band and intersubband transitions. Raman peaks observed at 2919 and 3050 cm−1 are attributed to transitions between the lowest two subbands. The results suggest that quantum dot arrays, produced by inexpensive robust electrochemical means, may be suitable for infrared detector applications.
Balandin et al. (Mon,) studied this question.