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We have studied the transport and resistance switching properties of Ti∕Sm0.7Ca0.3MnO3 (n unit cells)/La0.7Sr0.3MnO3 Ti∕SCMO(n)∕LSMO layered structures. The metal-to-metal contact of the Ti/LSMO junction (n=0) does not exhibit resistance switching effect, while the insertion of a very thin insulating SCMO layer (n⩾1) induces resistance switching effect. As the SCMO layer thickness (n) increases, the resistance switching amplitude grows and the response gets faster. This indicates that the SCMO layer as thin as several u.c. adjacent to the interface works as an active source for the resistance switching effect.
Sawa et al. (Mon,) studied this question.