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Results are presented from the first theoretical study of the electronic properties of strained-layer semiconductor superlattices made from lattice mismatched materials. The energy gaps and electronic states of GaAs-GaAs0.2P0.8 (100) superlattices are studied as a function of layer thicknesses using a tight binding model. The superlattice band gaps are found to depend on the layer thicknesses through quantum mechanical effects and through the strains in the layers.
G. C. Osbourn (Mon,) studied this question.