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The theory of the photovoltaic effect is used to predict the characteristics of a semiconductor which would operate with an optimum efficiency as a photovoltaic solar energy converter. The existence of such an optimum material results from the interaction between the optical properties of the semiconductor which determine what fraction of the solar spectrum is utilized and its electrical properties which determine the maximum efficiency of conversion into electricity. Considerable attention is devoted to the effect of the forbidden energy gap (EG) of the semiconductor. It is shown that atmospheric absorption causes a shift in the solar spectrum which changes the value of the optimum forbidden energy gap between the limits 1.2 evEG 1.6 ev. Furthermore, plausible departures of the diode reverse saturation current (I0) from the parametric dependence predicted by Shockley are considered, and it is shown that such departures reduce the advantage of the optimum material over others in the range 1.1 evEG2.0 ev. The relation between EG and the load impedance for maximum power transfer from the solar converter is discussed. Finally, I0 is computed from the published values of the semiconductor parameters of three intermetallic compounds, i.e., InP, GaAs, and CdTe, and it is shown that the efficiencies predicted for these materials are greater than those predicted for other materials which have been proposed, i.e., Si, CdS, Se, and AlSb.
J. J. Loferski (Sun,) studied this question.