Properties of silicon-metal contacts versus metal work-function, silicon impurity concentration and bias voltage

A preceding quantum and electronic theory of the metal-semiconductor interface is used to compute several physical quantities of contacts between silicon and various metals. The parameters of the contacts, such as the energy barrier heights, the electric field at the interface, the abscissa of the energy barrier peak, the depletion layer width, the interfacial dipole contribution to the energy barrier, the capacitance built-in-voltage and so on, are computed as functions of the metal work-function, of the silicon Fermi level and of the voltage biasing the contact. The theoretical values obtained prove to be in agreement with the published experimental results.