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Short channel Ga0.47In0.53As/Al0.48In0.52As selectively doped field effect transistors | Synapse

August 1, 1982IEEE Electron Device Letters13 citations

Short channel Ga0.47In0.53As/Al0.48In0.52As selectively doped field effect transistors

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CCC.Y. Chen ACA.Y. Cho KAK. Alavi

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Abstract

We report a selectively doped Ga0.47In0.53As/Al0.48In0.52As field effect transistor with a 1.2 µm gate length and present a model of two-region operation to analyze its I-V characteristics. This depletion mode transistor shows complete pinch-off and saturation characteristics with a low frequency transconductance of 70 mmho/ mm at 300 K and 125 mmho/mm at 77 K. The theoretical model, which includes the background carriers in the undoped Ga0.47In0.52As layer, agrees with the experimental results.

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Cite This Study

Chen et al. (1982) studied this question.

synapsesocial.com/papers/6a8af76795f0361a9ebea62d https://doi.org/10.1109/edl.1982.25552

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