On temperature-dependent experimental I-V and C-V data of Ni/n-GaN Schottky contacts

We report the current-voltage (I-V) and capacitance-voltage characteristics (C-V) of Ni/n-GaN Schottky diodes. Gallium nitride is a highly promising wide band gap semiconductor for applications in high power electronic and optoelectronic devices which require Schottky barriers for modulating the channel mobile charge. The I-V and C-V characteristics of the diodes have been measured in the temperature range of 80–400 K with steps of 20 K. Thermal carrier concentration and barrier height versus temperature plots have been obtained from the C−2-V characteristics, and a value of α=−1.40 meV/K for temperature coefficient of the barrier height. The modified activation energy plot according to the barrier inhomogeneity model has given the Richardson constant A∗ as 80 or 85 A/(cm2 K2).