Key points are not available for this paper at this time.
The conductivity of electrons in the inversion layer of silicon has been measured from 0 to 40 cm^-1 at 1. 2^ in the metallic and localized regimes. The correlation between (T) and () in the localized regime suggests that the drop in conductivity at low electron concentrations is caused by the appearance of a gap at the Fermi level.
Allen et al. (Mon,) studied this question.