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The N–In codoped p-type ZnO films have been prepared by ultrasonic spray pyrolysis. X-ray photoelectron spectroscopy analysis confirmed the presence of nitrogen and indium in the codoped films, and the incorporation of indium causes the change in the chemical state of nitrogen, which promotes the formation of p-type conduction. Low resistivity of 1.7×10−2 Ω cm, high carrier concentration of 2.44×1018 cm−3 and Hall mobility of 155 cm2 V−1 s−1 at room temperature for the codoped films were obtained. A conversion from p-type conduction to n type in a range of temperature has been identified by the measurement of Seebeck and Hall effect.
Bian et al. (Sun,) studied this question.