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The interface formation between cleaved GaP(110) substrates and Si overlayers was studied with synchrotron-radiation photoemission techniques. The experimental information included measurements of the valence- and conduction-band discontinuities and of the substrate band bending. In particular, we searched for possible overlayer-ordering effects on the discontinuities in annealed interfaces. No annealing-induced discontinuity changes were found within the experimental uncertainty of 0.1 eV. On the contrary, the substrate band bending was drastically changed by the annealing process.
Perfetti et al. (Mon,) studied this question.